FDS4885C datasheet, PDF - EEWORLD Datasheet

FDS4885C: Description7.5A, 40V, 0.022ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8; CategoryDiscrete semiconductor The transistor; File Size936KB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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7.5A, 40V, 0.022ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, SO-8

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	SOT
package instruction	SO-8
Contacts	8
Reach Compliance Code	unknown
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	7.5 A
Maximum drain-source on-resistance	0.022 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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