DF005M_2 datasheet, PDF - EEWORLD Datasheet

DF005M_2: Description1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size70KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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DF005M_2 Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Minimum breakdown voltage	200 V
Maximum average input current	1 A
Processing package description	PLASTIC, DF, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	IN-LINE
Terminal form	THROUGH-HOLE
terminal coating	NOT SPECIFIED
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Phase	1
Maximum repetitive peak reverse voltage	200 V
Maximum non-repetitive peak forward current	50 A

	DF005M_2	DF08M
Description	1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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