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BR3510(W)

Description
Bridge Rectifier Diode, 35A, 1000V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size70KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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BR3510(W) Overview

Bridge Rectifier Diode, 35A, 1000V V(RRM),

BR3510(W) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature125 °C
Maximum output current35 A
Maximum repetitive peak reverse voltage1000 V
surface mountNO

BR3510(W) Related Products

BR3510(W) BR3504(W) BR3506(W) BR3502(W)
Description Bridge Rectifier Diode, 35A, 1000V V(RRM), Bridge Rectifier Diode, 35A, 400V V(RRM), Bridge Rectifier Diode, 35A, 600V V(RRM), Bridge Rectifier Diode, 35A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A
Number of components 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C
Maximum output current 35 A 35 A 35 A 35 A
Maximum repetitive peak reverse voltage 1000 V 400 V 600 V 200 V
surface mount NO NO NO NO

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