Trans Voltage Suppressor Diode, 3000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Parts packaging code | DO-214AB |
package instruction | R-PDSO-C2 |
Contacts | 2 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Maximum breakdown voltage | 44.9 V |
Minimum breakdown voltage | 36.7 V |
Breakdown voltage nominal value | 40.8 V |
Maximum clamping voltage | 59 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95 code | DO-214AB |
JESD-30 code | R-PDSO-C2 |
JESD-609 code | e0 |
Maximum non-repetitive peak reverse power dissipation | 3000 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 1.61 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 33 V |
Maximum reverse current | 5 µA |
surface mount | YES |
technology | AVALANCHE |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | C BEND |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |