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2N6307LEADFREE

Description
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size52KB,4 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N6307LEADFREE Overview

Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

2N6307LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-204AA
package instructionTO-3, 2 PIN
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
JESD-609 codee3
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)5 MHz
Base Number Matches1

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