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2SF292200SYL

Description
Rectifier Diode, 1 Element, 15A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerSilan
Websitehttp://www.silanic.com.cn/
Environmental Compliance
Hangzhou Silan Microelectronics Co., Ltd. (SSE stock code: Silan Micro, 600460) is located in Hangzhou High-tech Industrial Development Zone. It is a high-tech enterprise specializing in integrated circuit chip design and semiconductor microelectronics related product production. The company's current main products are integrated circuits and semiconductor products.
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2SF292200SYL Overview

Rectifier Diode, 1 Element, 15A, 200V V(RRM),

2SF292200SYL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSilan
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
Maximum non-repetitive peak forward current200 A
Number of components1
Maximum operating temperature150 °C
Maximum output current15 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountYES

2SF292200SYL Preview

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2SF292200SYL
2SF292200SYL ULTRAFAST RECOVERY DIODE CHIPS
DESCRIPTION
Ø
2SF292200SYL is a ultrafast recovery diode chips fabricated
in silicon epitaxial planar technology;
Ø
Ultrafast recovery times;
Ø
High current capability;
Ø
High surge current capability;
Ø
Low forward voltage drop;
Ø
Low reverse current leakage.
ORDERING SPECIFICATIONS
Product Name
2SF292200SYL
Specification
For Au and AlSi wire bonding package
2SF292XXX CHIP TOPOGRAPHY
CHIP INFORMATION
Item
Wafer Size
Wafer Thickness
Gross Die
Top Metal & Thickness
Back Metal & Thickness
Die Size
Pad Size
Scribe line Width
Characterisation
5Inch
280±20µm
1250 Dice/Wafer
AL/3µm
Ag/1.5µm
2920µm X 2920µm
1660µm X 1660µm
40µm
ABSOLUTE MAXIMUM RATINGS
(Tamb=25°C)
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
V
RRM
I
FAV
I
FSM
T
J
T
STG
Ratings
200
15
200
150
-55~150
Unit
V
A
A
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2010.03.30
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