Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN
Parameter Name | Attribute value |
Objectid | 1481082360 |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LOW NOISE |
Configuration | SINGLE |
Maximum drain current (ID) | 0.05 A |
FET technology | JUNCTION |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 0.2 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
2SK932-21 | 2SK932-22 | 2SK932-23 | 2SK932-24 | |
---|---|---|---|---|
Description | Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN | Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN | Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN | Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN |
Objectid | 1481082360 | 1481082363 | 1481082366 | 1481082370 |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum drain current (ID) | 0.05 A | 0.05 A | 0.05 A | 0.05 A |
FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
Number of components | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 0.2 W | 0.2 W | 0.2 W | 0.2 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON |