NSQ3467 datasheet, PDF - EEWORLD Datasheet

NSQ3467: DescriptionPower Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, DIP-14; CategoryDiscrete semiconductor The transistor; File Size69KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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NSQ3467 Overview

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic, Metal-Sealed Cofired, 14 Pin, HERMETIC SEALED, DIP-14

Parameter Name	Attribute value
Maker	Microsemi
Parts packaging code	DIP
package instruction	HERMETIC SEALED, DIP-14
Contacts	14
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-116
JESD-30 code	R-CDIP-T14
JESD-609 code	e0
Number of components	4
Number of terminals	14
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz

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