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HY5DU56822AF-H

Description
DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60
Categorystorage    storage   
File Size396KB,36 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY5DU56822AF-H Overview

DDR DRAM, 32MX8, 0.75ns, CMOS, PBGA60, FBGA-60

HY5DU56822AF-H Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSK Hynix
Parts packaging codeBGA
package instructionTBGA, BGA60,9X12,40/32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
length13.5 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.17 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.02 A
Maximum slew rate0.305 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8.5 mm

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