IRF044SMD-JQR-B datasheet, PDF

Datasheet> All Categories > Discrete semiconductor> The transistor> IRF044SMD-JQR-B

IRF044SMD-JQR-B: DescriptionPower Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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IRF044SMD-JQR-B Overview

Power Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

IRF044SMD-JQR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	34 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	136 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

IRF044SMD-JQR-B Related Products

	IRF044SMD-JQR-B	IRF044SMDR4	IRF044SMD-JQR-BR4	IRF044SMD
Description	Power Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN	Power Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN	Power Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN	Power Field-Effect Transistor, 34A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
Is it Rohs certified?	incompatible	conform to	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	340 mJ	340 mJ	340 mJ	340 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (ID)	34 A	34 A	34 A	34 A
Maximum drain-source on-resistance	0.05 Ω	0.05 Ω	0.05 Ω	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	136 A	136 A	136 A	136 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON

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