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NMC27C256BQ15

Description
IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM
Categorystorage    storage   
File Size354KB,10 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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NMC27C256BQ15 Overview

IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM

NMC27C256BQ15 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNational Semiconductor(TI )
package instructionWDIP, DIP28,.6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time150 ns
I/O typeCOMMON
JESD-30 codeR-GDIP-T28
JESD-609 codee0
memory density262144 bit
Memory IC TypeUVPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32KX8
Output characteristics3-STATE
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeWDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE, WINDOW
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage12.75 V
Certification statusNot Qualified
Maximum seat height5.715 mm
Maximum standby current0.0001 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

NMC27C256BQ15 Related Products

NMC27C256BQ15 NMC27C256BQM200 NMC27C256BQ25 NMC27C256BQ250 NMC27C256BQ20 NMC27C256BQM150 NMC27C256BQE200 NMC27C256BQE150
Description IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 250 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 250 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6 WDIP, DIP28,.6
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 150 ns 200 ns 250 ns 250 ns 200 ns 150 ns 200 ns 150 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-GDIP-T28 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28 R-GDIP-T28
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
memory density 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bit 262144 bi
Memory IC Type UVPROM UVPROM UVPROM UVPROM UVPROM UVPROM UVPROM UVPROM
memory width 8 8 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 28 28 28 28 28 28 28 28
word count 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000 32000 32000 32000 32000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 125 °C 70 °C 70 °C 70 °C 125 °C 85 °C 85 °C
organize 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8 32KX8
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED
encapsulated code WDIP WDIP WDIP WDIP WDIP WDIP WDIP WDIP
Encapsulate equivalent code DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6 DIP28,.6
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW IN-LINE, WINDOW
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Programming voltage 12.75 V 12.75 V 12.75 V 12.75 V 12.75 V 12.75 V 12.75 V 12.75 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 5.715 mm 5.715 mm 5.715 mm 5.715 mm 5.715 mm 5.715 mm 5.715 mm 5.715 mm
Maximum supply voltage (Vsup) 5.25 V 5.5 V 5.25 V 5.5 V 5.25 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.75 V 4.5 V 4.75 V 4.5 V 4.75 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL MILITARY COMMERCIAL COMMERCIAL COMMERCIAL MILITARY INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm 15.24 mm
Maker National Semiconductor(TI ) - National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI ) National Semiconductor(TI )
Maximum standby current 0.0001 A - 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.03 mA - 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA 0.03 mA

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