IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | National Semiconductor(TI ) |
package instruction | WDIP, DIP28,.6 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 150 ns |
I/O type | COMMON |
JESD-30 code | R-GDIP-T28 |
JESD-609 code | e0 |
memory density | 262144 bit |
Memory IC Type | UVPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 32768 words |
character code | 32000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 32KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | WDIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE, WINDOW |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 12.75 V |
Certification status | Not Qualified |
Maximum seat height | 5.715 mm |
Maximum standby current | 0.0001 A |
Maximum slew rate | 0.03 mA |
Maximum supply voltage (Vsup) | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 15.24 mm |
NMC27C256BQ15 | NMC27C256BQM200 | NMC27C256BQ25 | NMC27C256BQ250 | NMC27C256BQ20 | NMC27C256BQM150 | NMC27C256BQE200 | NMC27C256BQE150 | |
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Description | IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 250 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 250 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM | IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 | WDIP, DIP28,.6 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum access time | 150 ns | 200 ns | 250 ns | 250 ns | 200 ns | 150 ns | 200 ns | 150 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
Memory IC Type | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
word count | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
character code | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 125 °C | 70 °C | 70 °C | 70 °C | 125 °C | 85 °C | 85 °C |
organize | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
encapsulated code | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP | WDIP |
Encapsulate equivalent code | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Programming voltage | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V | 12.75 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum seat height | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm | 5.715 mm |
Maximum supply voltage (Vsup) | 5.25 V | 5.5 V | 5.25 V | 5.5 V | 5.25 V | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.75 V | 4.5 V | 4.75 V | 4.5 V | 4.75 V | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | INDUSTRIAL | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm | 15.24 mm |
Maker | National Semiconductor(TI ) | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
Maximum standby current | 0.0001 A | - | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A |
Maximum slew rate | 0.03 mA | - | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA |