TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Toshiba Semiconductor |
package instruction | , |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 0.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 0.15 W |
surface mount | YES |
SSM3J15FU(TE85L,F) | SSM3J15FU(TE85L) | |
---|---|---|
Description | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70 | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-70 |
Is it Rohs certified? | conform to | incompatible |
Maker | Toshiba Semiconductor | Toshiba Semiconductor |
Reach Compliance Code | unknown | unknown |
Configuration | Single | Single |
Maximum drain current (Abs) (ID) | 0.1 A | 0.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C |
Polarity/channel type | P-CHANNEL | P-CHANNEL |
Maximum power dissipation(Abs) | 0.15 W | 0.15 W |
surface mount | YES | YES |