DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| package instruction | TSSOP, TSSOP66,.46 |
| Reach Compliance Code | compliant |
| Maximum access time | 0.75 ns |
| Maximum clock frequency (fCLK) | 133 MHz |
| I/O type | COMMON |
| interleaved burst length | 2,4,8 |
| JESD-30 code | R-PDSO-G66 |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 8 |
| Humidity sensitivity level | 1 |
| Number of terminals | 66 |
| word count | 33554432 words |
| character code | 32000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 32MX8 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSSOP |
| Encapsulate equivalent code | TSSOP66,.46 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Celsius) | 225 |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Continuous burst length | 2,4,8 |
| Maximum standby current | 0.003 A |
| Maximum slew rate | 0.25 mA |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | GULL WING |
| Terminal pitch | 0.635 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD