GP150MHB16S datasheet, PDF - EEWORLD Datasheet

GP150MHB16S: DescriptionInsulated Gate Bipolar Transistor, 150A I(C), 1600V V(BR)CES,; CategoryDiscrete semiconductor The transistor; File Size513KB，11 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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Insulated Gate Bipolar Transistor, 150A I(C), 1600V V(BR)CES,

Parameter Name	Attribute value
Maker	Dynex
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	1600 V
Gate-emitter maximum voltage	20 V
Number of components	1
Maximum operating temperature	150 °C
Maximum power dissipation(Abs)	1250 W
VCEsat-Max	4.1 V

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