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NNCD3.6C-A

Description
NNCD3.6C-A
CategoryDiscrete semiconductor    diode   
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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NNCD3.6C-A Overview

NNCD3.6C-A

NNCD3.6C-A Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeUSM
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codePWSP0002ZA-A2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage3.8 V
Minimum breakdown voltage3.4 V
Breakdown voltage nominal value3.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak reverse power dissipation85 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.15 W
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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