IS41LV32256-40PQ datasheet, PDF

IS41LV32256-40PQ: DescriptionEDO DRAM, 256KX32, 40ns, CMOS, PQFP100; Categorystorage storage; File Size944KB，21 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS41LV32256-40PQ Overview

EDO DRAM, 256KX32, 40ns, CMOS, PQFP100

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Reach Compliance Code	unknown
Maximum access time	40 ns
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	EDO DRAM
memory width	32
Number of terminals	100
word count	262144 words
character code	256000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.7X.9
Package shape	RECTANGULAR
Package form	FLATPACK
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	512
Maximum standby current	0.002 A
Maximum slew rate	0.21 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD

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