P4KE82CE3 datasheet, PDF - EEWORLD Datasheet

P4KE82CE3: DescriptionTrans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN; CategoryDiscrete semiconductor diode; File Size199KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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P4KE82CE3 Overview

Trans Voltage Suppressor Diode, 400W, 66.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
Parts packaging code	DO-41
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum breakdown voltage	90.2 V
Minimum breakdown voltage	73.8 V
Breakdown voltage nominal value	82 V
Shell connection	ISOLATED
Maximum clamping voltage	118 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-204AL
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	1.13 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	66.4 V
Maximum reverse current	2 µA
surface mount	NO
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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