Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, CASE 5A, 2 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
package instruction | O-PALF-W2 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY |
Maximum breakdown voltage | 123 V |
Minimum breakdown voltage | 111 V |
Breakdown voltage nominal value | 117 V |
Shell connection | ISOLATED |
Maximum clamping voltage | 197 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | O-PALF-W2 |
JESD-609 code | e0 |
Humidity sensitivity level | 1 |
Maximum non-repetitive peak reverse power dissipation | 100000 W |
Number of components | 1 |
Number of terminals | 2 |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 1.61 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 100 V |
surface mount | NO |
technology | AVALANCHE |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |