Fast Page DRAM Module, 8MX32, 60ns, MOS, SIMM-72
Parameter Name | Attribute value |
Maker | Hitachi (Renesas ) |
Parts packaging code | SIMM |
package instruction | SIMM, SSIM72 |
Contacts | 72 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FAST PAGE |
Maximum access time | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS REFRESH |
I/O type | COMMON |
JESD-30 code | R-XSMA-N72 |
memory density | 268435456 bit |
Memory IC Type | FAST PAGE DRAM MODULE |
memory width | 32 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 72 |
word count | 8388608 words |
character code | 8000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 8MX32 |
Output characteristics | 3-STATE |
Package body material | UNSPECIFIED |
encapsulated code | SIMM |
Encapsulate equivalent code | SSIM72 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 2048 |
Maximum seat height | 25.4 mm |
self refresh | NO |
Maximum standby current | 0.016 A |
Maximum slew rate | 0.92 mA |
Maximum supply voltage (Vsup) | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | MOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | SINGLE |
HB56A832SBS-6B | HB56A832BS-7B | HB56A832SBS-7B | HB56A832SBS-8B | HB56A832BS-6B | HB56A832BS-8B | |
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Description | Fast Page DRAM Module, 8MX32, 60ns, MOS, SIMM-72 | Fast Page DRAM Module, 8MX32, 70ns, MOS, SIMM-72 | Fast Page DRAM Module, 8MX32, 70ns, MOS, SIMM-72 | Fast Page DRAM Module, 8MX32, 80ns, MOS, SIMM-72 | Fast Page DRAM Module, 8MX32, 60ns, MOS, SIMM-72 | Fast Page DRAM Module, 8MX32, 80ns, MOS, SIMM-72 |
Parts packaging code | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
package instruction | SIMM, SSIM72 | SIMM, SSIM72 | SIMM, SSIM72 | SIMM, SSIM72 | SIMM, SSIM72 | SIMM, SSIM72 |
Contacts | 72 | 72 | 72 | 72 | 72 | 72 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
Maximum access time | 60 ns | 70 ns | 70 ns | 80 ns | 60 ns | 80 ns |
Other features | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH | RAS ONLY/CAS BEFORE RAS REFRESH |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 | R-XSMA-N72 |
memory density | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
Memory IC Type | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE | FAST PAGE DRAM MODULE |
memory width | 32 | 32 | 32 | 32 | 32 | 32 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 72 | 72 | 72 | 72 | 72 | 72 |
word count | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words | 8388608 words |
character code | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 | 8000000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 8MX32 | 8MX32 | 8MX32 | 8MX32 | 8MX32 | 8MX32 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
encapsulated code | SIMM | SIMM | SIMM | SIMM | SIMM | SIMM |
Encapsulate equivalent code | SSIM72 | SSIM72 | SSIM72 | SSIM72 | SSIM72 | SSIM72 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 |
Maximum seat height | 25.4 mm | 25.4 mm | 25.4 mm | 25.4 mm | 25.4 mm | 25.4 mm |
self refresh | NO | NO | NO | NO | NO | NO |
Maximum standby current | 0.016 A | 0.016 A | 0.016 A | 0.016 A | 0.016 A | 0.016 A |
Maximum slew rate | 0.92 mA | 0.84 mA | 0.84 mA | 0.76 mA | 0.92 mA | 0.76 mA |
Maximum supply voltage (Vsup) | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V | 5.25 V |
Minimum supply voltage (Vsup) | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V | 4.75 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO |
technology | MOS | MOS | MOS | MOS | MOS | MOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maker | Hitachi (Renesas ) | Hitachi (Renesas ) | - | - | Hitachi (Renesas ) | Hitachi (Renesas ) |