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MT5C1008C-55E/883C

Description
Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32
Categorystorage    storage   
File Size246KB,17 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

MT5C1008C-55E/883C Overview

Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.400 INCH, CERAMIC, DIP-32

MT5C1008C-55E/883C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicross
Parts packaging codeDIP
package instructionDIP, DIP32,.4
Contacts32
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time55 ns
Other featuresTTL COMPATIBLE INPUTS/OUTPUTS, 2V DATA RETENTION, BATTERY BACKUP, LOW POWER STANDBY
I/O typeCOMMON
JESD-30 codeR-CDIP-T32
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.4
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height5.8928 mm
Maximum standby current0.01 A
Minimum standby current4.5 V
Maximum slew rate0.125 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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