BCR129FE6327 datasheet, PDF - EEWORLD Datasheet

BCR129FE6327: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TSFP-3; CategoryDiscrete semiconductor The transistor; File Size862KB，11 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BCR129FE6327 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TSFP-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code	compliant
Factory Lead Time	1 week
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

	BCR129FE6327	BCR129SE6327	BCR129WE6327
Description	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TSFP-3	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SOT-363, 6 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	Infineon	Infineon	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant	compliant	compliant
Other features	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	120	120	120
JESD-30 code	R-PDSO-F3	R-PDSO-G6	R-PDSO-G3
Number of components	1	2	1
Number of terminals	3	6	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
surface mount	YES	YES	YES
Terminal form	FLAT	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Humidity sensitivity level	-	1	1
Maximum operating temperature	-	150 °C	150 °C

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