Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel,
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | IXYS |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Maximum collector current (IC) | 72 A |
Collector-emitter maximum voltage | 600 V |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE |
Gate-emitter maximum voltage | 20 V |
JESD-30 code | R-XUFM-X12 |
Number of components | 4 |
Number of terminals | 12 |
Maximum operating temperature | 150 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 225 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | MOTOR CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 330 ns |
Nominal on time (ton) | 110 ns |
VCEsat-Max | 2.4 V |
Base Number Matches | 1 |
MKI50-06A7 | MKI50-06A7T | |
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Description | Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, | Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, |
Is it Rohs certified? | conform to | conform to |
Maker | IXYS | IXYS |
Reach Compliance Code | compliant | compliant |
Maximum collector current (IC) | 72 A | 72 A |
Collector-emitter maximum voltage | 600 V | 600 V |
Gate-emitter maximum voltage | 20 V | 20 V |
Number of components | 4 | 1 |
Maximum operating temperature | 150 °C | 150 °C |
Maximum power dissipation(Abs) | 225 W | 225 W |
VCEsat-Max | 2.4 V | 2.4 V |