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MKI50-06A7

Description
Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerIXYS
Environmental Compliance  
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MKI50-06A7 Overview

Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel,

MKI50-06A7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)72 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X12
Number of components4
Number of terminals12
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)225 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)330 ns
Nominal on time (ton)110 ns
VCEsat-Max2.4 V
Base Number Matches1

MKI50-06A7 Related Products

MKI50-06A7 MKI50-06A7T
Description Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES, N-Channel, Insulated Gate Bipolar Transistor, 72A I(C), 600V V(BR)CES,
Is it Rohs certified? conform to conform to
Maker IXYS IXYS
Reach Compliance Code compliant compliant
Maximum collector current (IC) 72 A 72 A
Collector-emitter maximum voltage 600 V 600 V
Gate-emitter maximum voltage 20 V 20 V
Number of components 4 1
Maximum operating temperature 150 °C 150 °C
Maximum power dissipation(Abs) 225 W 225 W
VCEsat-Max 2.4 V 2.4 V

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