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CR12BM-12

Description
Silicon Controlled Rectifier, 18.84A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size78KB,6 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

CR12BM-12 Overview

Silicon Controlled Rectifier, 18.84A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

CR12BM-12 Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current30 mA
Maximum DC gate trigger voltage1.5 V
JESD-30 codeR-PSIP-T3
Maximum leakage current2 mA
On-state non-repetitive peak current360 A
Number of components1
Number of terminals3
Maximum on-state current12000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum rms on-state current18.84 A
Off-state repetitive peak voltage600 V
Repeated peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR
Base Number Matches1
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