CY7C1306BV18-167BZXI datasheet, PDF

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CY7C1306BV18-167BZXI: DescriptionQDR SRAM, 512KX36, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165; Categorystorage storage; File Size845KB，20 Pages; ManufacturerCypress Semiconductor; Environmental Compliance

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CY7C1306BV18-167BZXI Overview

QDR SRAM, 512KX36, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

CY7C1306BV18-167BZXI Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	LBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	2.5 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	167 MHz
I/O type	SEPARATE
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	15 mm
memory density	18874368 bit
Memory IC Type	QDR SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.24 A
Minimum standby current	1.7 V
Maximum slew rate	0.5 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
width	13 mm
Base Number Matches	1

CY7C1306BV18-167BZXI Related Products

	CY7C1306BV18-167BZXI	CY7C1303BV18-167BZXC	CY7C1306BV18-167BZI	CY7C1303BV18-167BZI	CY7C1306BV18-167BZXC	CY7C1303BV18-167BZXI
Description	QDR SRAM, 512KX36, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165	QDR SRAM, 1MX18, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165	QDR SRAM, 512KX36, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	QDR SRAM, 1MX18, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	QDR SRAM, 512KX36, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165	QDR SRAM, 1MX18, 2.5ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	incompatible	incompatible	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LBGA, BGA165,11X15,40	LBGA, BGA165,11X15,40	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165	LBGA, BGA165,11X15,40	LBGA, BGA165,11X15,40
Contacts	165	165	165	165	165	165
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	2.5 ns	2.5 ns	2.5 ns	2.5 ns	2.5 ns	2.5 ns
Other features	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	167 MHz	167 MHz	167 MHz	167 MHz	167 MHz	167 MHz
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165
JESD-609 code	e1	e1	e0	e0	e1	e1
length	15 mm	15 mm	15 mm	15 mm	15 mm	15 mm
memory density	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit	18874368 bit
Memory IC Type	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM	QDR SRAM
memory width	36	18	36	18	36	18
Humidity sensitivity level	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1
Number of terminals	165	165	165	165	165	165
word count	524288 words	1048576 words	524288 words	1048576 words	524288 words	1048576 words
character code	512000	1000000	512000	1000000	512000	1000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-	-40 °C
organize	512KX36	1MX18	512KX36	1MX18	512KX36	1MX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LBGA	LBGA	LBGA	LBGA	LBGA	LBGA
Encapsulate equivalent code	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40	BGA165,11X15,40
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	220	220	260	260
power supply	1.5/1.8,1.8 V	1.5/1.8,1.8 V	1.5/1.8,1.8 V	1.5/1.8,1.8 V	1.5/1.8,1.8 V	1.5/1.8,1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
Maximum standby current	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A	0.24 A
Minimum standby current	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Maximum slew rate	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA	0.5 mA
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	20	20	NOT SPECIFIED	NOT SPECIFIED	20	20
width	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm
Maker	-	-	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor

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