Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon
| Parameter Name | Attribute value |
| package instruction | E-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH SPEED SWITCH |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.2 V |
| JESD-30 code | E-LALF-W2 |
| Maximum non-repetitive peak forward current | 40 A |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 165 °C |
| Maximum output current | 1 A |
| Package body material | GLASS |
| Package shape | ELLIPTICAL |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse recovery time | 0.2 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD