Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LG Semicon Co., Ltd. |
Reach Compliance Code | unknown |
access mode | FAST PAGE |
Maximum access time | 70 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP OPERATION |
I/O type | COMMON |
JESD-30 code | R-PDSO-J28 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | FAST PAGE DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 28 |
word count | 524288 words |
character code | 512000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 512KX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOJ |
Encapsulate equivalent code | SOJ28,.44 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 1024 |
self refresh | YES |
Maximum standby current | 0.0002 A |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | J BEND |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |
GM71CS4800CLJ-70 | GM71C4800CJ-70 | GM71CS4800CJ-60 | GM71C4800CJ-60 | GM71CS4800CJ-70 | GM71CS4800CLJ-60 | |
---|---|---|---|---|---|---|
Description | Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28, | Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28, | Fast Page DRAM, 512KX8, 60ns, CMOS, PDSO28, | Fast Page DRAM, 512KX8, 60ns, CMOS, PDSO28, | Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28, | Fast Page DRAM, 512KX8, 60ns, CMOS, PDSO28, |
Maker | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. | LG Semicon Co., Ltd. |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
access mode | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
Maximum access time | 70 ns | 70 ns | 60 ns | 60 ns | 70 ns | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP OPERATION | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP OPERATION |
JESD-30 code | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-J28 | R-PDSO-J28 |
memory density | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bi |
Memory IC Type | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
memory width | 8 | 8 | 8 | 8 | 8 | 8 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 |
word count | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
character code | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
self refresh | YES | YES | YES | YES | YES | YES |
Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | J BEND | J BEND | J BEND | J BEND | J BEND | J BEND |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Is it Rohs certified? | incompatible | - | incompatible | - | incompatible | incompatible |
I/O type | COMMON | - | COMMON | - | COMMON | COMMON |
JESD-609 code | e0 | - | e0 | - | e0 | e0 |
Output characteristics | 3-STATE | - | 3-STATE | - | 3-STATE | 3-STATE |
encapsulated code | SOJ | - | SOJ | - | SOJ | SOJ |
Encapsulate equivalent code | SOJ28,.44 | - | SOJ28,.44 | - | SOJ28,.44 | SOJ28,.44 |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
power supply | 5 V | - | 5 V | - | 5 V | 5 V |
refresh cycle | 1024 | - | 1024 | - | 1024 | 1024 |
Maximum standby current | 0.0002 A | - | 0.001 A | - | 0.001 A | 0.0002 A |
Maximum slew rate | 0.12 mA | - | 0.13 mA | - | 0.12 mA | 0.13 mA |
Terminal surface | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal pitch | 1.27 mm | - | 1.27 mm | - | 1.27 mm | 1.27 mm |
Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |