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DF08M

Description
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size54KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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DF08M DF01M DF04M DF005M DF02M DF10M DF06M
Description 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,1KV V(RRM),DIP 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Number of terminals - 4 4 - 4 - 4
Number of components - 4 4 - 4 - 4
Maximum average input current - 1 A 1 A - 1 A - 1 A
state - DISCONTINUED ACTIVE - ACTIVE CONSULT MFR ACTIVE
packaging shape - Rectangle Rectangle - RECTANGULAR - Rectangle
Package Size - IN-line IN-line - IN-LINE - IN-line
Terminal form - THROUGH-hole THROUGH-hole - THROUGH-HOLE - THROUGH-hole
Terminal location - pair pair - DUAL - pair
Packaging Materials - Plastic/Epoxy Plastic/Epoxy - PLASTIC/EPOXY - Plastic/Epoxy
structure - Bridge, 4 ELEMENTS Bridge, 4 ELEMENTS - BRIDGE, 4 ELEMENTS - Bridge, 4 ELEMENTS
Diode component materials - silicon silicon - SILICON - silicon
Diode type - bridge rectifier diode bridge rectifier diode - BRIDGE RECTIFIER DIODE bridge rectifier diode bridge rectifier diode
Phase - 1 1 - 1 - 1
Maximum repetitive peak reverse voltage - 100 V 400 V - 200 V - 600 V
Maximum non-repetitive peak forward current - 50 A 50 A - 50 A - 50 A

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