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DF08S

Description
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size261KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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DF08S Overview

1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

DF08S Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current1 A
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current50 A

DF08S Related Products

DF08S DF005S DF01S DF02S DF04S DF10S DF06S
Description 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,400V V(RRM),SO BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
state DISCONTINUED - ACTIVE - CONSULT MFR ACTIVE ACTIVE
Diode type bridge rectifier diode - bridge rectifier diode - bridge rectifier diode bridge rectifier diode bridge rectifier diode
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