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K4M64163LK-RG750

Description
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, FBGA-54
Categorystorage    storage   
File Size113KB,12 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4M64163LK-RG750 Overview

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, FBGA-54

K4M64163LK-RG750 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionVFBGA, BGA54,9X9,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeS-PBGA-B54
JESD-609 codee0
length8 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals54
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA54,9X9,32
Package shapeSQUARE
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)240
power supply2.5 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.0005 A
Maximum slew rate0.115 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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