Insulated Gate Bipolar Transistor, 19A I(C), 1200V V(BR)CES, N-Channel, MODULE-25
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | FLANGE MOUNT, R-XUFM-X25 |
| Reach Compliance Code | compliant |
| Other features | UL RECOGNIZED |
| Shell connection | ISOLATED |
| Maximum collector current (IC) | 19 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | COMPLEX |
| Gate-emitter maximum voltage | 20 V |
| JESD-30 code | R-XUFM-X25 |
| JESD-609 code | e3 |
| Number of components | 7 |
| Number of terminals | 25 |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 90 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | POWER CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 350 ns |
| Nominal on time (ton) | 90 ns |
| VCEsat-Max | 3.4 V |
| Base Number Matches | 1 |
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