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FR104

Description
1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size717KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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FR104 Overview

1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS

Features

Product Name: 1.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS


Product model: FR104


product features:


Low forward voltage drop


High current capability


High reliability


High surge current capability



Mechanical data:


Cases:Molded plastic



Epoxy:UL 94V-0 rate flame retardant



Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed



Polarity:Color band denotes cathode end



High temperature soldering guaranteed;


250?C /10 seconds/.375”,(9.5mm)lead


Lengths at 5 lbs.,(2.3kg) tension



Weight: 0.34 grams



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 400V



Maximum RMS Voltage VRMS Voltage effective value: 280V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 400V



Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=55℃ IF(AV) Maximum forward current: 1.0A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 30 A



Maximum Instantaneous Forward Voltage @ 1.0A VF Maximum forward voltage drop: 1.2 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA


DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 100μA



Maximun Reverse Recovery Time TRR :150 nS



Typical Junction Capacitance CJ :15 pF



Typical Thermal Resistance (Note) RθJA thermal resistance coefficient: 55 ℃/W; RθJC thermal resistance coefficient: 8 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -55 to +125 ℃



Storage Temperature Range TSTG Storage Temperature Range: -55 to +150 ℃



Package: DO-41


FR104 Parametric

Parameter NameAttribute value
package instructionO-PALF-W2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

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