2SD1905 datasheet, PDF - EEWORLD Datasheet

2SD1905: DescriptionPower Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size101KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SD1905 Overview

Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN

Parameter Name	Attribute value
Objectid	1481157705
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	40 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz

	2SD1905	2SB1269
Description	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN	Power Bipolar Transistor, 7A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN
Objectid	1481157705	1481157597
Parts packaging code	TO-220AB	TO-220AB
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	7 A	7 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	40 W	40 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	10 MHz	10 MHz

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