GVD30504-000 datasheet, PDF - EEWORLD Datasheet

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GVD30504-000: DescriptionVariable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt, DIE; CategoryDiscrete semiconductor diode; File Size48KB，1 Pages; ManufacturerSprague Goodman

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GVD30504-000 Overview

Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt, DIE

GVD30504-000 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	DIE
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	25 V
Nominal diode capacitance	26 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	X-XUUC-N
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Certification status	Not Qualified
minimum quality factor	500
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Varactor Diode Classification	HYPERABRUPT
Base Number Matches	1

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	GVD30504-000	GVD30503-004	GVD30501-000	GVD30502-000	GVD30501-001	GVD30501-004	GVD30502-004	GVD30503-000	GVD30502-001
Description	Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt, DIE	Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt, DIE	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt, DIE	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt,	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt	Variable Capacitance Diode, 26pF C(T), 25V, Silicon, Hyperabrupt, DIE	Variable Capacitance Diode, 9.5pF C(T), 25V, Silicon, Hyperabrupt,
Reach Compliance Code	compliant	compli	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Nominal diode capacitance	26 pF	26 pF	9.5 pF	9.5 pF	9.5 pF	9.5 pF	9.5 pF	26 pF	9.5 pF
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JESD-30 code	X-XUUC-N	R-PDSO-G3	X-XUUC-N	X-XUUC-N	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	X-XUUC-N	R-PDSO-G3
Package body material	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	PLASTIC/EPOXY
Package shape	UNSPECIFIED	RECTANGULAR	UNSPECIFIED	UNSPECIFIED	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR
Package form	UNCASED CHIP	SMALL OUTLINE	UNCASED CHIP	UNCASED CHIP	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	UNCASED CHIP	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	500	200	200	750	200	200	750	200	750
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	GULL WING	NO LEAD	NO LEAD	GULL WING	GULL WING	GULL WING	NO LEAD	GULL WING
Terminal location	UPPER	DUAL	UPPER	UPPER	DUAL	DUAL	DUAL	UPPER	DUAL
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT
Base Number Matches	1	1	1	1	1	1	1	1	1
package instruction	DIE	-	DIE	DIE	R-PDSO-G3	-	-	DIE	R-PDSO-G3
Configuration	-	COMMON CATHODE, 2 ELEMENTS	-	-	SINGLE	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	-	SINGLE
Number of components	-	2	-	-	1	2	2	-	1
Number of terminals	-	3	-	-	3	3	3	-	3
Maker	-	-	Sprague Goodman	Sprague Goodman	Sprague Goodman	Sprague Goodman	-	-	Sprague Goodman

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