GM72V661641DLI-10K datasheet, PDF

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GM72V661641DLI-10K: DescriptionSynchronous DRAM, 4MX16, 8ns, CMOS, PDSO54,; Categorystorage storage; File Size621KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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GM72V661641DLI-10K Overview

Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54,

GM72V661641DLI-10K Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SON, SOLCC54,.3,20
Reach Compliance Code	compliant
Is Samacsys	N
Maximum access time	8 ns
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-N54
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SON
Encapsulate equivalent code	SOLCC54,.3,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0004 A
Maximum slew rate	0.13 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Base Number Matches	1

GM72V661641DLI-10K Related Products

	GM72V661641DLI-10K	GM72V661641DI-8	GM72V661641DI-10K
Description	Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54,	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54,	Synchronous DRAM, 4MX16, 8ns, CMOS, PDSO54,
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	SON, SOLCC54,.3,20	SON, SOLCC54,.3,20	SON, SOLCC54,.3,20
Reach Compliance Code	compliant	compliant	compliant
Maximum access time	8 ns	6 ns	8 ns
Maximum clock frequency (fCLK)	100 MHz	125 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-N54	R-PDSO-N54	R-PDSO-N54
JESD-609 code	e0	e0	e0
memory density	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16
Number of terminals	54	54	54
word count	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SON	SON	SON
Encapsulate equivalent code	SOLCC54,.3,20	SOLCC54,.3,20	SOLCC54,.3,20
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.0004 A	0.002 A	0.002 A
Maximum slew rate	0.13 mA	0.165 mA	0.13 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	DUAL	DUAL
Maker	-	SK Hynix	SK Hynix

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