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IS61VPD102418A-250B2I

Description
Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
Categorystorage    storage   
File Size192KB,29 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS61VPD102418A-250B2I Overview

Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119

IS61VPD102418A-250B2I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instruction14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Is SamacsysN
Maximum access time2.6 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
Maximum seat height2.41 mm
Minimum standby current2.38 V
Maximum slew rate0.55 mA
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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