Cache SRAM, 1MX18, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Integrated Silicon Solution ( ISSI ) |
Parts packaging code | BGA |
package instruction | 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119 |
Contacts | 119 |
Reach Compliance Code | compliant |
ECCN code | 3A991.B.2.A |
Is Samacsys | N |
Maximum access time | 2.6 ns |
Maximum clock frequency (fCLK) | 250 MHz |
I/O type | COMMON |
JESD-30 code | R-PBGA-B119 |
JESD-609 code | e0 |
length | 22 mm |
memory density | 18874368 bit |
Memory IC Type | CACHE SRAM |
memory width | 18 |
Humidity sensitivity level | 3 |
Number of functions | 1 |
Number of terminals | 119 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 1MX18 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA119,7X17,50 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5 V |
Certification status | Not Qualified |
Maximum seat height | 2.41 mm |
Minimum standby current | 2.38 V |
Maximum slew rate | 0.55 mA |
Maximum supply voltage (Vsup) | 2.625 V |
Minimum supply voltage (Vsup) | 2.375 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | BALL |
Terminal pitch | 1.27 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 14 mm |
Base Number Matches | 1 |