1SS387CT,L3F(B datasheet, PDF - EEWORLD Datasheet

1SS387CT,L3F(B: DescriptionRectifier Diode; CategoryDiscrete semiconductor diode; File Size195KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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1SS387CT,L3F(B Overview

Rectifier Diode

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	R-XBCC-N2
Reach Compliance Code	unknown
Is Samacsys	N
application	FAST RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V
JESD-30 code	R-XBCC-N2
Maximum non-repetitive peak forward current	1 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Maximum output current	0.1 A
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Maximum power dissipation	0.15 W
Maximum repetitive peak reverse voltage	85 V
Maximum reverse current	0.5 µA
Maximum reverse recovery time	0.0016 µs
Reverse test voltage	80 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Base Number Matches	1

	1SS387CT,L3F(B	1SS387CT,L3F	1SS387CT,L3F(T
Description	Rectifier Diode	Reverse recovery time (trr): 1.6ns DC reverse withstand voltage (Vr): 80V Average rectified current (Io): 100mA Forward voltage drop (Vf): 1.2V @ 100mA	Rectifier Diode
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Reach Compliance Code	unknown	unknown	unknown
Is Samacsys	N	N	N
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.2 V	1.2 V	1.2 V
JESD-30 code	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Maximum non-repetitive peak forward current	1 A	1 A	1 A
Number of components	1	1	1
Phase	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	0.1 A	0.1 A	0.1 A
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Maximum power dissipation	0.15 W	0.15 W	0.15 W
Maximum repetitive peak reverse voltage	85 V	85 V	85 V
Maximum reverse current	0.5 µA	0.5 µA	0.5 µA
Maximum reverse recovery time	0.0016 µs	0.0016 µs	0.0016 µs
Reverse test voltage	80 V	80 V	80 V
surface mount	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM
Base Number Matches	1	1	1
Is it Rohs certified?	conform to	conform to	-

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