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3DD1160E

Description
Power device_BJT&DIODES_Bipolar transistor
CategoryThe transistor   
File Size145KB,3 Pages
ManufacturerCRMICRO
Websitehttps://www.crmicro.com/
The company takes power semiconductor devices and power/analog integrated circuits as its industrial foundation, and targets the industrial electronics, consumer electronics, automotive electronics, and 5G communications markets. It has technology development and manufacturing platforms for power devices, GaN, MEMS sensors, etc., and can provide high-reliability power devices, modules and other products and application solutions. The low-voltage, medium-voltage and high-voltage power device products developed by the company can be widely used in electric vehicles, solar energy, automotive electronics, mobile phone fast charging, white appliances, general switches, power supplies and other industries.
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3DD1160E Overview

Power device_BJT&DIODES_Bipolar transistor

3DD1160E Parametric

Parameter NameAttribute value
PART3DD1160E
GENERALDESC1
PACKAGEdie
POLARITYN
PTA0.8
IC1.8
VCB01700
VCB02750
VCE01400
VCE02450
VEBO19
VEBO215
VCESAT10.8
VCESAT20.25
HFE115-25
HFE220-25
TS12.0-5.0
TS23.0-4.0
SPECIAL/
SPECIAL2/
TECH/
CRTIME202005
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