PJA3441_R1_00001 datasheet, PDF

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PJA3441_R1_00001: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 88mΩ @ 3.1A, 10V Maximum power dissipation (Ta=25°C): 1.25W Type: P-channel; CategoryDiscrete semiconductor The transistor; File Size252KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJA3441_R1_00001 Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 88mΩ @ 3.1A, 10V Maximum power dissipation (Ta=25°C): 1.25W Type: P-channel

PJA3441_R1_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	3.1 A
Maximum drain-source on-resistance	0.088 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	12.4 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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