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LBAS40-06LT1G

Description
DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 120mA Forward voltage drop (Vf): 400mV @ 1mA 40V, 0.12A, VF=0.4V@1mA
CategoryDiscrete semiconductor    diode   
File Size68KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
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LBAS40-06LT1G Overview

DC reverse withstand voltage (Vr): 40V Average rectified current (Io): 120mA Forward voltage drop (Vf): 400mV @ 1mA 40V, 0.12A, VF=0.4V@1mA

LBAS40-06LT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.38 V
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.12 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
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