C1812X682K102T datasheet, PDF - EEWORLD Datasheet

C1812X682K102T: DescriptionAccuracy: ±10% Capacitance: 6.8nF Rated voltage: 1kV Temperature drift coefficient (dielectric material): X7R Material: X7R; CategoryPassive components The patch capacitance; File Size810KB，27 Pages; ManufacturerHoly Stone; Websitehttp://www.holystone.com.tw/; Hoshentang Enterprise is one of the few diversified companies in the electronic component supply chain that covers both active and passive channels and has a manufacturing plant. In 1999, it established a production base in Longtan, Taoyuan, Taiwan, to manufacture multilayer ceramic capacitors (MLCC). With its own brand "HEC", it provides a variety of customized products for global marketing, meeting customers' all-round needs and gaining customers' trust. Hoshentang Enterprise also represents many internationally renowned semiconductor components, providing customers with complete solutions and diverse components to help customers create new operational value.

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C1812X682K102T Overview

Accuracy: ±10% Capacitance: 6.8nF Rated voltage: 1kV Temperature drift coefficient (dielectric material): X7R Material: X7R

Parameter Name	Attribute value
Accuracy	±10%
Capacitance	6.8nF
Rated voltage	1kV
Temperature drift coefficient (dielectric material)	X7R

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