C1206X102K501T datasheet, PDF - EEWORLD Datasheet

C1206X102K501T: DescriptionAccuracy: ±10% Capacitance: 1nF Rated voltage: 500V Temperature drift coefficient (dielectric material): X7R Material: X7R; CategoryPassive components The patch capacitance; File Size895KB，38 Pages; ManufacturerHoly Stone; Websitehttp://www.holystone.com.tw/; Hoshentang Enterprise is one of the few diversified companies in the electronic component supply chain that covers both active and passive channels and has a manufacturing plant. In 1999, it established a production base in Longtan, Taoyuan, Taiwan, to manufacture multilayer ceramic capacitors (MLCC). With its own brand "HEC", it provides a variety of customized products for global marketing, meeting customers' all-round needs and gaining customers' trust. Hoshentang Enterprise also represents many internationally renowned semiconductor components, providing customers with complete solutions and diverse components to help customers create new operational value.

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C1206X102K501T Overview

Accuracy: ±10% Capacitance: 1nF Rated voltage: 500V Temperature drift coefficient (dielectric material): X7R Material: X7R

Parameter Name	Attribute value
Accuracy	±10%
Capacitance	1nF
Rated voltage	500V
Temperature drift coefficient (dielectric material)	X7R

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