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VSI080N06MS

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 80mΩ @ 10A, 10V; 100mΩ @ 5A, 4.5V Maximum power dissipation (Ta=25°C): 30W Type: N-channel N-channel 60V 15A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size244KB,5 Pages
ManufacturerVanguard
Websitehttp://www.vgsemi.com
The headquarters of Weizhao Semiconductor is located in the Nanshan Dashahe Innovation Corridor, a high-tech industrial park in Shenzhen Special Economic Zone, adjacent to the Shenzhen Institute of the Chinese Academy of Sciences and the Southern University of Science and Technology. It is a high-tech enterprise specializing in the design of discrete device series and the research and development of semiconductor microelectronics related products. With many years of experience in cooperation with well-known power supply manufacturers, it insists on deepening its roots in the field of discrete devices to enhance the performance competitiveness and market share of domestic discrete device brands. Weizhao focuses on achieving innovative, stable, efficient and low-cost overall solutions. After long-term efforts, it has become one of the few advanced IC design companies that have all series of low-voltage, medium-voltage and high-voltage high-power POWER MOSFET discrete devices, as well as special semiconductor process design capabilities. Products are widely used in computers, consumer electronics, LCD/LED displays, communication power supplies, industrial power supplies, as well as new energy industries such as solar energy, wind energy, and lithium batteries.
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VSI080N06MS Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 15A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 80mΩ @ 10A, 10V; 100mΩ @ 5A, 4.5V Maximum power dissipation (Ta=25°C): 30W Type: N-channel N-channel 60V 15A

VSI080N06MS Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C15A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance80mΩ @ 10A,10V;100mΩ @ 5A,4.5V
Maximum power dissipation (Ta=25°C)30W
typeN channel

VSI080N06MS Preview

Download Datasheet
VSI080N06MS
60V/15A N-Channel Advanced Power MOSFET
Features
N-Channel
Enhancement mode
Very low on-resistance @
V
GS
=4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),typ@VGS=10V
R
DS(on),typ@VGS=4.5V
I
D
60
68
85
15
V
mΩ
mΩ
A
TO-251-S
Part ID
VSI080N06MS
Package Type
TO-251-S
Marking
080N06
Tape and reel
information
80pcs/Tube
Maximum ratings, at
T
j=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Rating
60
±16
Unit
V
V
A
A
A
W
A
mJ
°C
°C
V
(BR)DSS
V
GS
I
D
I
DM
T
C
=25°C
Continuous drain current@V
GS
=10V
15
9.6
35
30
15
5
175
-55 to 175
T
A
=70°C
Pulse drain current tested
Maximum power dissipation
Diode Continuous Forward Current
Avalanche energy, single pulsed
Maximum Junction Temperature
Storage and operating temperature range
T
C
=25°C
T
C
=25°C
P
D
I
S
EAS
T
C
=25°C
I
D
=
10A
T
J
T
STG
Thermal characteristics
R
JA
R
JC
Thermal Resistance Junction-Ambient
Thermal Resistance-Junction to Case
60
5
°C/W
°C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Nov.18
th
, 2015
Page - 1 - Total 5
www.vgsemi.com
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