VSB012N03MS datasheet, PDF - EEWORLD Datasheet

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VSB012N03MS: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 38A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 16mΩ @ 10A, 4.5V Maximum power Dissipation (Ta=25°C): 41W Type: N-channel N-channel 30V 38A; CategoryDiscrete semiconductor MOS (field effect tube); File Size498KB，5 Pages; ManufacturerVanguard; Websitehttp://www.vgsemi.com; The headquarters of Weizhao Semiconductor is located in the Nanshan Dashahe Innovation Corridor, a high-tech industrial park in Shenzhen Special Economic Zone, adjacent to the Shenzhen Institute of the Chinese Academy of Sciences and the Southern University of Science and Technology. It is a high-tech enterprise specializing in the design of discrete device series and the research and development of semiconductor microelectronics related products. With many years of experience in cooperation with well-known power supply manufacturers, it insists on deepening its roots in the field of discrete devices to enhance the performance competitiveness and market share of domestic discrete device brands. Weizhao focuses on achieving innovative, stable, efficient and low-cost overall solutions. After long-term efforts, it has become one of the few advanced IC design companies that have all series of low-voltage, medium-voltage and high-voltage high-power POWER MOSFET discrete devices, as well as special semiconductor process design capabilities. Products are widely used in computers, consumer electronics, LCD/LED displays, communication power supplies, industrial power supplies, as well as new energy industries such as solar energy, wind energy, and lithium batteries.

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VSB012N03MS Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 38A (Tc) Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 16mΩ @ 10A, 4.5V Maximum power Dissipation (Ta=25°C): 41W Type: N-channel N-channel 30V 38A

VSB012N03MS Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	38A(Tc)
Gate-source threshold voltage	2.2V @ 250uA
Drain-source on-resistance	16mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)	41W
type	N channel

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