LSF55R140GF datasheet, PDF - EEWORLD Datasheet

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LSF55R140GF: DescriptionDrain-source voltage (Vdss): 550V Continuous drain current (Id) (at 25°C): 23A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 140mΩ @ 11.5A, 10V Maximum power Dissipation (Ta=25°C): - Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size1MB，13 Pages; ManufacturerLonten Semiconductor Co., Ltd.; Websitehttp://www.lonten.cc; Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.

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LSF55R140GF Overview

Drain-source voltage (Vdss): 550V Continuous drain current (Id) (at 25°C): 23A (Tc) Gate-source threshold voltage: 4.5V @ 250uA Drain-source on-resistance: 140mΩ @ 11.5A, 10V Maximum power Dissipation (Ta=25°C): - Type: N-channel

LSF55R140GF Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	550V
Continuous drain current (Id) at 25°C	23A(Tc)
Gate-source threshold voltage	4.5V @ 250uA
Drain-source on-resistance	140mΩ @ 11.5A,10V
Maximum power dissipation (Ta=25°C)	-
type	N channel

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LSB55R140GF/LSC55R140GF/LSD55R140GF/

LSE55R140GF/LSF55R140GF

LonFET

Lonten N-channel 550V, 23A, 0.14Ω LonFET

Power MOSFET

Description

LonFET

Power MOSFET is fabricated using

advanced super junction technology.

The resulting

device has extremely low on resistance, making it

especially suitable for applications which require

superior power density and outstanding efficiency.

Product Summary

@ T

j,max

DS(on),max

g,typ

600V

0.14Ω

69A

40nC

Features



Ultra low R

DS(on)

Ultra low gate charge (typ. Q

= 40nC)

100% UIS tested

RoHS compliant

TO-262

TO-247

TO-220

TO-220MF

TO-263

Applications



Power faction correction (PFC).

Switched mode power supplies (SMPS).

Uninterruptible power supply (UPS).

N-Channel MOSFET

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Continuous drain current

( T

= 25°C )

( T

= 100°C )

Pulsed drain current

Gate-Source voltage

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive

Power Dissipation TO-247 ( T

= 25°C )

- Derate above 25°C

Power Dissipation TO-220MF ( T

= 25°C )

- Derate above 25°C

Mounting torque To-220MF ( M2.5 screws )

Operating and Storage Temperature Range

Continuous diode forward current

Diode pulse current

, T

STG

S,pulse

GSS

DSS

Symbol

Value

550

±30

600

0.4

205

1.64

0.28

-55 to +150

Unit

W/°C

Ncm

°C

Version 2.4,Mar-2020

www.lonten.cc

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