HY3403P datasheet, PDF - EEWORLD Datasheet

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HY3403P: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 140A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 2.8mΩ @ 70A, 10V Maximum power consumption Dispersion (Ta=25°C): 115W(Tc) Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size695KB，11 Pages; ManufacturerHuayi Microelectronics Co., Ltd.; Websitehttp://www.hymexa.com/; Huayi Microelectronics Co., Ltd. was established on June 28, 2017 with a registered capital of 260 million yuan. Tianshui Huatian Electronics Group Co., Ltd. is the company's controlling shareholder, holding 88.46% of the company's shares.

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HY3403P Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 140A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 2.8mΩ @ 70A, 10V Maximum power consumption Dispersion (Ta=25°C): 115W(Tc) Type: N-channel

HY3403P Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	140A(Tc)
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	2.8mΩ @ 70A,10V
Maximum power dissipation (Ta=25°C)	115W(Tc)
type	N channel

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