Drain-source voltage (Vdss): 250V Continuous drain current (Id) (at 25°C): 17A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 165mΩ @ 8.5A, 10V Maximum power consumption Dispersion (Ta=25°C): 110W (Tc) Type: N channel N channel, 250V, 17A, 165mΩ@10V
| Parameter Name | Attribute value |
| Brand Name | STMicroelectronics |
| Maker | STMicroelectronics |
| Parts packaging code | D2PAK |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 12 weeks |
| Avalanche Energy Efficiency Rating (Eas) | 54 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 250 V |
| Maximum drain current (Abs) (ID) | 17 A |
| Maximum drain current (ID) | 17 A |
| Maximum drain-source on-resistance | 0.165 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 245 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W |
| Maximum pulsed drain current (IDM) | 68 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - annealed |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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