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CL31B104KEHSFNE

Description
Accuracy: ±10% Capacitance: 100nF Rated voltage: 250V Temperature drift coefficient (dielectric material): X7R X7R
CategoryPassive components    The patch capacitance   
File Size7MB,84 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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CL31B104KEHSFNE Overview

Accuracy: ±10% Capacitance: 100nF Rated voltage: 250V Temperature drift coefficient (dielectric material): X7R X7R

CL31B104KEHSFNE Parametric

Parameter NameAttribute value
Accuracy±10%
Capacitance100nF
Rated voltage250V
Temperature drift coefficient (dielectric material)X7R

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