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PSMN7R0-60YS,115

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 89A (Tc) Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 6.4mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 117W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size791KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PSMN7R0-60YS,115 Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 89A (Tc) Gate-source threshold voltage: 4V @ 1mA Drain-source on-resistance: 6.4mΩ @ 15A, 10V Maximum power consumption Dispersion (Ta=25°C): 117W(Tc) Type: N-channel

PSMN7R0-60YS,115 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C89A(Tc)
Gate-source threshold voltage4V @ 1mA
Drain-source on-resistance6.4mΩ @ 15A,10V
Maximum power dissipation (Ta=25°C)117W(Tc)
typeN channel

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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