山东晶导微电子有限公司
Jingdao Microelectronics
ABS1-10 THRU ABS10-10
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
• Glass Passivated Chip Junction
• Reverse Voltage - 100 to 1000 V
• Forward Current - 1 A
• High Surge Current Capability
• Designed for Surface Mount Application
MECHANICAL DATA
• Case: ABS/LBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 88mg / 0.0031oz
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
2
ABS/LBF Package
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
ABS1-10
100
70
100
ABS2-10
200
140
200
ABS4-10
400
280
400
ABS6-10
600
420
600
ABS8-10 ABS10-10
Units
800
560
800
1000
700
1000
V
V
V
Maximum RMS voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
at Ta = 50
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage per element
@I
F
=1.0A
@
T
A
=25
°C
@
T
A
=100℃
@
T
A
=125
°C
I
O
1
A
I
FSM
35
A
V
F
1.1
5
50
100
13
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
μA
Typical Junction Capacitance（Note1）
C
j
R
θJA
R
θJL
T
j
, T
stg
pF
Typical Thermal Resistance（Note2）
80
25
-55 ~ +150
°C/W
Operating and Storage Temperature Range
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×(5×5mm
2
）copper
pad.
2015.03
ABS-A-ABS10-10-1A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
ABS1-10 THRU ABS10-10
Fig.1 Average Rectified Output Current
Derating Curve
Average Rectified Output Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
T
J
=125
°C
10
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Ambient Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2015.03
www.sdjingdao.com
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