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VBA2309

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 13.5A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 5W (Tc) Type: P channel P channel, -30V, -13A, 9.2mΩ@10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size470KB,9 Pages
ManufacturerVBsemi Electronics Co. Ltd.
Websitehttp://www.vbsemi.tw/
Founded in 2000, VBsemi is the most competitive power semiconductor component manufacturer of MOSFET in Taiwan. The company has obtained many product invention patents and has been certified by ISO14001, QS9000, and ISO9001. VBsemi is a Taiwanese company that independently develops, produces, and sells MOSFET under its own brand. From component design, wafer processing, packaging, characteristic analysis, testing, and customer service, it is marketed worldwide. The company's products have been widely used in UPS, Power Inverter, CCFL, DC Fan, SMPS, Adapter, Lighting, Battery, DC-DC, LCD Monitor and other fields.
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VBA2309 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 13.5A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7mΩ @ 10A, 10V Maximum power consumption Dispersion (Ta=25°C): 5W (Tc) Type: P channel P channel, -30V, -13A, 9.2mΩ@10V

VBA2309 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C13.5A(Tc)
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance7mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)5W(Tc)
typeP channel
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